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inchange semiconductor product specification silicon npn power transistors 2SC2581 description ? with to-3pn package ? complement to type 2sa1106 ? high power dissipation ? high current capability applications ? audio power amplifier ? dc-dc converter pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 6 v i c collector current 10 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC2581 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ;i b =0 140 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 200 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 2.0 v i cbo collector cut-off current v cb =200v; i e =0 100 | a i ebo emitter cut-off current v eb =6v; i c =0 100 | a h fe dc current gain i c =3a ; v ce =4v 50 f t transition frequency i c =0.5a ; v ce =10v 20 mhz
inchange semiconductor product specification 3 silicon npn power transistors 2SC2581 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)

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